Sony has developed the approx. 2.13M effective pixel back-illuminated CMOS image sensors IMX290LQR and IMX291LQR with improved sensitivity in the visible-light and near infrared light regions for industrial applications.
A new 2.9 µm-square unit pixel has been developed that combines a back-illuminated structure with technology for improving near infrared sensitivity to further enhance picture quality at low illumination while at the same time realizing Full HD cameras for industrial applications. This realizes two or more times the sensitivity in the visible-light region and three or more times the sensitivity in the near infrared light region than that of the existing Sony product (IMX236LQJ)*1. In addition, two types of WDR (Wide Dynamic Range) technology are also provided to further improve imaging performance.
The new lineup includes the two types of the IMX290LQR, which has the DOL (Digital Overlap) -WDR function and the IMX291LQR, which does not have the DOL-WDR function.
*1: See the New Product Information released in September 2013.
- Back-illuminated structure with 2.9 µm-square unit pixel
- High sensitivity characteristics (two or more times that of the existing product)
- Improved sensitivity in the near infrared light region (three or more times that of the existing product)
- Supports WDR (multiple exposure WDR, DOL-WDR)
- Versatile interface (CMOS parallel, low-voltage LVDS serial, MIPI CSI-2)